卢瑟福背散射(RBS)在材料表征中的应用(6)

材料表征中卢瑟福背散射表征手段的原理及运用

卢瑟福背散射能谱分析RBS analysis of a thin GaAs layer on a Si substrate, by alpha particles with an energy of f typically ll 2‐3 MeV. The h energy of f backscattered b k d particles l determine d the mass of the target atom. Particles scattered from below the surface lose energy at a measurable rate; hence the energy scale yields the depth of the scattering of the particle. The peak width of the Ga or As signal is proportional to the areal density or thickness of the GaAs film.

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