KSC2073

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

VCBO VCEO VEBO IC PC TJ TSTG

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature

Value

150150 5 1.5 25150- 55 to 150

Units

VVVAW°C°C

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

BVCBO BVCEO BVEBO ICBO hFE VCE(sat)

fT Cob

Parameter

Collector-Base Breakdown Voltage

Test Condition

IC = 500μA, IE = 0

Min.

150150 5

Typ.Max.Units

VVV

Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 Collector Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

VCB = 120V, IE = 0 VCE = 10V, IC = 0.5A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A VCB =10V, IE = 0,

f = 1MHz

10

40

75 450

140 1

μAVMHzpF

hFE Classification

Classification

hFE

H140 ~ 80

H260 ~ 125

© 2011 Fairchild Semiconductor CorporationKSC2073 Rev. A1

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