ZnO纳米线阵列的电沉积法制备及表征 - 英文 - 解析(2)

ZnO/AAOassembliesenormouslybytheelectrodepositionmethod.Furthermore,theXRDpatternsindicatethattheZnOnanowiresareofpolycrystallinestructureswithoutpreferredorientation.WealsofoundthattherewasAl2O3featuredetect-edneitherinFig.3AnorinFig.3B,whichisbecauseanodicalu-minumoxideisamorphousuntilheatedupto824℃[17-18]. Photoluminescence(PL212,SPEX)measurementswereper-formedtostudytheluminescencepropertyofZnOnanowires.Astrongemissionbandwasobservedat504nm,whichwasat-tributedtotheoxygenvacancydefectsofZnO[19],asshowninFig.4.Ablueemissionbandat430nmwasobserved.Compar-ingthePLspectrumofablankAAOtemplate(theinsetinFig.4)withthatoftheZnO/AAOassembly,weconcludethatthebroademissionbandaround430nmoriginatesfromtheAAOtemplate. 3Conclusions

Inconclusion,largescaleuniformZnOnanowirearraysbasedonhexagonallyarrangedAAOwasfabricatedbyanef-fectiveelectrodepositionmethod.TheirFE-SEMimagesshowthattheZnOnanowirearraysarelong,continuous,anduni-form.XRDpatternsindicatethatZnnanowiresinAAOcanbeoxidizedcompletelyin2hat800℃inoxygenatmosphere.TheZnO/AAOassemblyhasastronggreenemissionbandat504nmandablueemissionbandat430nm.Thegreenemis-sionisattributedtooxygendefectsandtheblueemissionorigi-natesfromAAO.TheaboveconclusionssuggestthattheZnO/AAOassemblycouldbeusefulforthepreparationofZnOelec-troluminescencedevices.References 1

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